Broadcom - 124NLVTC

  1. Home
  2. Broadcom - 124NLVTC
124NLVTC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 124NLVTC
Description Photo Diodes;
Datasheet 124NLVTC Datasheet
In Stock357
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
357 - -

Popular Products

Category Top Products

BPW34FSR18R by Osram Opto Semiconductors

BPW34FSR18R

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FSR18R is a single PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has a min reverse breakdown voltage of 16V, and nominal light current of 0.04mA. Ideal for applications requiring infrared detection in compact spaces.
PS11.9-5-TO5 by First Sensor Ag

PS11.9-5-TO5

First Sensor Ag

Photo Diodes;
SFH2310 by Infineon Technologies

SFH2310

Infineon Technologies

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Germanium; Maximum Reverse Voltage: 40 V; Maximum Dark Current: 200 nA;
ASDL-5772-D31 by Broadcom

ASDL-5772-D31

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
SFH229FA by Infineon Technologies

SFH229FA

Infineon Technologies

SFH229FA by Infineon Technologies is a PIN photodiode with max response time of 0.00000001s, max reverse voltage of 20V, and operating temp range from -55°C to 100°C. Ideal for optoelectronic applications requiring high-speed light detection in various environments.
PD95-21B/TR10 by Everlight Electronics

PD95-21B/TR10

Everlight Electronics

Everlight Electronics' PD95-21B/TR10 is a 1.9mm PIN photodiode with peak wavelength of 940nm. Operating temperature ranges from -25 to 85°C, with reverse breakdown voltage of 32V. Ideal for IR applications, it features surface mounting and max dark current of 10nA.
OP950 by Tt Electronics Plc

OP950

Tt Electronics Plc

OP950 by Tt Electronics Plc is a single PIN photodiode with peak wavelength of 935nm. It operates b/w -40°C to 100°C, with min reverse breakdown voltage of 60V. Ideal for infrared applications, it features GaAlAs semiconductor material and radial mount configuration.
NDL5105P1 by Renesas Electronics

NDL5105P1

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium;
AEPD-C0D0-00000 by Broadcom

AEPD-C0D0-00000

Broadcom

PIN PHOTODIODE;
SRD00512Z by Infineon Technologies

SRD00512Z

Infineon Technologies

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium; Maximum Response Time: .0000000000003 s;
ZOPT2202AC9R by Renesas Electronics

ZOPT2202AC9R

Renesas Electronics

PIN PHOTODIODE;
TEMD7100X01 by Vishay Intertechnology

TEMD7100X01

Vishay Intertechnology

The Vishay Intertechnology TEMD7100X01 is a 2mm PIN photodiode with peak wavelength of 950nm. Operating temperature ranges from -40°C to 100°C, with reverse breakdown voltage of 60V. Ideal for infrared applications, it features low dark current and surface mounting option.
SFH291 by Infineon Technologies

SFH291

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; No. of Functions: 1; Maximum Dark Current: 1 nA;
MICROFJ-SMA-30035-GEVB by Onsemi

MICROFJ-SMA-30035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
MICRORB-10035-MLP by Onsemi

MICRORB-10035-MLP

Onsemi

PIN PHOTODIODE;
BPW34 by Vishay Intertechnology

BPW34

Vishay Intertechnology

BPW34 by Vishay Intertechnology is a 3mm square PIN photodiode with a peak wavelength of 900nm. It has a max operating temperature of 100°C and a min reverse breakdown voltage of 60V. This photodiode is commonly used in applications requiring infrared detection and can be mounted through hole.
KOM2033AF by Infineon Technologies

KOM2033AF

Infineon Technologies

Photo Diodes; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: .001 nA; Shape: RECTANGULAR; Peak Wavelength (nm): 840; Infrared (IR) Range: YES;
BPV10NF by Telefunken Microelectronics

BPV10NF

Telefunken Microelectronics

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 60 V; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .0000000025 s;
ASDL-5270-D31 by Broadcom

ASDL-5270-D31

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
BPX60 by Infineon Technologies

BPX60

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000003 s; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;