Broadcom - 295G879

  1. Home
  2. Broadcom - 295G879
295G879 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295G879
Description Laser Diodes;
Datasheet 295G879 Datasheet
In Stock284
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
284 - -

Popular Products

Category Top Products

TOLD322CBA by Toshiba

TOLD322CBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 70 Cel;
TOLD321ABB by Toshiba

TOLD321ABB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .000000001 s;
SDL7032-102 by Onsemi

SDL7032-102

Onsemi

SDL7032-102 by Onsemi is an 850nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8562LB342-BA by Renesas Electronics

NX8562LB342-BA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1534;
DL-4038-025 by Onsemi

DL-4038-025

Onsemi

DL-4038-025 by Onsemi is a LASER DIODE with max. forward current of 0.08A, peak wavelength of 635nm, and operating temp. range from -10 °C to 40°C. Ideal for applications requiring precise optical emission in through-hole mounting setups.
STH61008A by Infineon Technologies

STH61008A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A; Maximum Forward Voltage: 1.5 V;
TOLD320BBB by Toshiba

TOLD320BBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel;
NX8567SAS397-BC by Renesas Electronics

NX8567SAS397-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1539;
NX8571SC626-BA-A by Renesas Electronics

NX8571SC626-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1563; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel;
NX6504GJ-A by Renesas Electronics

NX6504GJ-A

Renesas Electronics

LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); No. of Functions: 1; Peak Wavelength (nm): 1550; Maximum Threshold Current: 25 mA; Shape: ROUND;
CQF25A/D14 by NXP Semiconductors

CQF25A/D14

NXP Semiconductors

CQF25A/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8570SA373-BA by Renesas Electronics

NX8570SA373-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1537; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
TOLD121R by Toshiba

TOLD121R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .085 A; Minimum Operating Temperature: -10 Cel;
NX6508GK51-AZ by Renesas Electronics

NX6508GK51-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1510; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel;
GH0401FA2K by Sharp Corporation

GH0401FA2K

Sharp Corporation

GH0401FA2K by Sharp Corp is a 405nm LASER DIODE with max output power of 150W and peak current of 0.13A. Ideal for RADIAL MOUNT applications, operating b/w -10 to 75°C, it offers high efficiency in various optoelectronic setups.
NX8566LE770-BC by Renesas Electronics

NX8566LE770-BC

Renesas Electronics

Laser Diodes;
NX8565LE761-CC by Renesas Electronics

NX8565LE761-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Semiconductor Material: GaAs; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s;
STH91004G by Infineon Technologies

STH91004G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A; Minimum Operating Temperature: 0 Cel;
NX8570SC6053-BA-AZ by Renesas Electronics

NX8570SC6053-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1605;
V105Q121A-940 by Osram Opto Semiconductors

V105Q121A-940

Osram Opto Semiconductors

Osram Opto Semiconductors' V105Q121A-940 is a 940nm laser diode with peak power of 3000W and threshold current of 700mA. Ideal for surface mount applications, it operates b/w -20°C to 85°C temperatures.