Broadcom - 295L36

  1. Home
  2. Broadcom - 295L36
295L36 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295L36
Description Laser Diodes;
Datasheet 295L36 Datasheet
In Stock236
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
236 - -

Popular Products

Category Top Products

TOLD363S by Toshiba

TOLD363S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: .0015 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1550;
TOLD153R by Toshiba

TOLD153R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .115 A; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel;
NX8563LA461-CC-A by Renesas Electronics

NX8563LA461-CC-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1546; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .00000000012 s;
NX8564LE565-BC by Renesas Electronics

NX8564LE565-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A;
NX8562LB533 by Renesas Electronics

NX8562LB533

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1553; Maximum Forward Current: .3 A;
NX8570SC358-BA-AZ by Renesas Electronics

NX8570SC358-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1535; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
STL51005A by Infineon Technologies

STL51005A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 1330; Spectral Bandwidth: 5 m; Minimum Operating Temperature: -40 Cel;
NX8567SAM449-BC by Renesas Electronics

NX8567SAM449-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1544; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
SDL5140-201 by Onsemi

SDL5140-201

Onsemi

SDL5140-201 by Onsemi is an 800nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
TOLD9151MB by Toshiba

TOLD9151MB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 685; Semiconductor Material: InGaAlP;
SFH480403 by Infineon Technologies

SFH480403

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2 V; Shape: RECTANGULAR; Configuration: SINGLE;
TOLD322BAB by Toshiba

TOLD322BAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;
NX8571SC553-BA-AZ by Renesas Electronics

NX8571SC553-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1555; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel;
NX8571SC529-BA-A by Renesas Electronics

NX8571SC529-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1553;
NX8565LE461-BC by Renesas Electronics

NX8565LE461-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2 V;
DL-LS1017 by Onsemi

DL-LS1017

Onsemi

DL-LS1017 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and max operating temp of 60 °C. Ideal for applications requiring through hole mounting, it operates b/w -10°C to 60°C and has a max forward voltage of 3.5V.
CQF25C/D41 by NXP Semiconductors

CQF25C/D41

NXP Semiconductors

CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
TOLD9211(S) by Toshiba

TOLD9211(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 670; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
DL-3150-105 by Onsemi

DL-3150-105

Onsemi

DL-3150-105 by Onsemi is a GaAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 to 70 °C, with max forward current of 0.06A and voltage of 2.3V. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNTing.
NX8571SC853-BA by Renesas Electronics

NX8571SC853-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1585;