Broadcom - 295M34

  1. Home
  2. Broadcom - 295M34
295M34 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295M34
Description Laser Diodes;
Datasheet 295M34 Datasheet
In Stock454
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
454 - -

Popular Products

Category Top Products

TOLD137 by Toshiba

TOLD137

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .105 A; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Minimum Operating Temperature: -10 Cel;
NX8563LB453-CA by Renesas Electronics

NX8563LB453-CA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1545; Maximum Forward Current: .3 A;
NX8560SJ307-BC by Renesas Electronics

NX8560SJ307-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1530; Maximum Response Time: .00000000004 s;
NX8564LE795-CC by Renesas Electronics

NX8564LE795-CC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1579; Maximum Forward Current: .15 A;
STH61004G by Infineon Technologies

STH61004G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A;
TOLD9150(S) by Toshiba

TOLD9150(S)

Toshiba

LASER DIODE; Peak Wavelength (nm): 690; No. of Functions: 1; Nominal Output Power: 30 W;
TOLD123R by Toshiba

TOLD123R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .08 A;
DL-LS1061 by Onsemi

DL-LS1061

Onsemi

DL-LS1061 by Onsemi is a Laser Diode with 0.115A max forward current, peak wavelength of 658nm, and 3V max forward voltage. It operates b/w -10 °C to 70°C, suitable for through hole mounting applications in various industries.
SFH4232 by Infineon Technologies

SFH4232

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 1 m; Peak Wavelength (nm): 920; Minimum Operating Temperature: -40 Cel;
TOLD9443SD by Toshiba

TOLD9443SD

Toshiba

LASER DIODE; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Peak Wavelength (nm): 650; Size: 1.6 mm; Nominal Output Power: 10 W; Maximum Threshold Current: 65 mA;
DL-3150-103 by Onsemi

DL-3150-103

Onsemi

DL-3150-103 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.06A and voltage of 2.3V, suitable for THROUGH HOLE MOUNT applications in temp range -10 to 70 °C.
STM51005A by Infineon Technologies

STM51005A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1330; Spectral Bandwidth: 5 m;
NX7337BF-AA-AZ by Renesas Electronics

NX7337BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .000000002 s;
TOLD135 by Toshiba

TOLD135

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
TOLD323CCB by Toshiba

TOLD323CCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 80 Cel;
DL-3147-021 by Onsemi

DL-3147-021

Onsemi

DL-3147-021 by Onsemi is a 660nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications. This diode offers precise peak wavelength emission for various optoelectronic uses.
NX8570SC6070D-BA by Renesas Electronics

NX8570SC6070D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1607; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
NX8562LB405 by Renesas Electronics

NX8562LB405

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 1.5 V;
SDL6032 by Onsemi

SDL6032

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 830; JESD-609 Code: e0; Semiconductor Material: GaAlAs;
NDL7701P1D by Renesas Electronics

NDL7701P1D

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1550; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 1.3 V;