Broadcom - 295M35

  1. Home
  2. Broadcom - 295M35
295M35 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295M35
Description Laser Diodes;
Datasheet 295M35 Datasheet
In Stock231
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
231 - -

Popular Products

Category Top Products

CQF25A/D13 by NXP Semiconductors

CQF25A/D13

NXP Semiconductors

CQF25A/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
SDL4032-201 by Onsemi

SDL4032-201

Onsemi

SDL4032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
TOLD155 by Toshiba

TOLD155

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .11 A; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel;
NX8570SA373-BA by Renesas Electronics

NX8570SA373-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1537; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
TOLD322CBB by Toshiba

TOLD322CBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s;
CQF23/D13 by NXP Semiconductors

CQF23/D13

NXP Semiconductors

CQF23/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8567SAM342-CC by Renesas Electronics

NX8567SAM342-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1534; Maximum Response Time: .000000000125 s;
STL51705G by Infineon Technologies

STL51705G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V; Spectral Bandwidth: 5 m; Maximum Forward Current: .12 A;
NX8560SJ409-CC by Renesas Electronics

NX8560SJ409-CC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1540; Maximum Forward Current: .15 A; Maximum Response Time: .00000000004 s; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V;
NX8571SC354-BA-A by Renesas Electronics

NX8571SC354-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1535; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel;
NX8501CC-BA by Renesas Electronics

NX8501CC-BA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
NX8565LE311-CC by Renesas Electronics

NX8565LE311-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: GaAs; Peak Wavelength (nm): 1531; Maximum Response Time: .000000000125 s; Maximum Forward Current: .1 A;
TOLD321ACB by Toshiba

TOLD321ACB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
NX8570SC6087Q-BA by Renesas Electronics

NX8570SC6087Q-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
TOLD134 by Toshiba

TOLD134

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830;
TOLD321ACA by Toshiba

TOLD321ACA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310;
TOLD9225(S) by Toshiba

TOLD9225(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: GaAlInP; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 670;
TOLD323CBC by Toshiba

TOLD323CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310;
F4048 by Toshiba

F4048

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 810; Maximum Forward Current: .13 A;
TOLD80F by Toshiba

TOLD80F

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 3 m; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1300; Maximum Operating Temperature: 60 Cel;