Broadcom - 295M51

  1. Home
  2. Broadcom - 295M51
295M51 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295M51
Description Laser Diodes;
Datasheet 295M51 Datasheet
In Stock77
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
77 - -

Popular Products

Category Top Products

NX6309GH-AZ by Renesas Electronics

NX6309GH-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000005 s;
NX8570SC883D-BA-AZ by Renesas Electronics

NX8570SC883D-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1588; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
SDL3034-011 by Onsemi

SDL3034-011

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
NX8571SC358-BA-AZ by Renesas Electronics

NX8571SC358-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
TOLD323BCB by Toshiba

TOLD323BCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 80 Cel; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V;
TOLD322ABB by Toshiba

TOLD322ABB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel;
NX8570SC997-BA-AZ by Renesas Electronics

NX8570SC997-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1599; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
SPLCG81 by Infineon Technologies

SPLCG81

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Nominal Output Power: 2000 W; No. of Functions: 1; Maximum Operating Temperature: 60 Cel; Size: 4.5 mm;
NX8567SAM295-BC by Renesas Electronics

NX8567SAM295-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1529; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
TOLD173 by Toshiba

TOLD173

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830;
NX8570SC6053-BA-A by Renesas Electronics

NX8570SC6053-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1605; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
NX8560SJ389-CC by Renesas Electronics

NX8560SJ389-CC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Response Time: .00000000004 s;
NX8570SA638-BA by Renesas Electronics

NX8570SA638-BA

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
DL-3149-070 by Onsemi

DL-3149-070

Onsemi

DL-3149-070 by Onsemi is a 695nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications like medical devices and industrial sensors.
SDL4038-011 by Onsemi

SDL4038-011

Onsemi

SDL4038-011 by Onsemi is a 645nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.
TOED110 by Toshiba

TOED110

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310;
NX8571SC346D-BA by Renesas Electronics

NX8571SC346D-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1534; Semiconductor Material: InGaAsP;
SDL8033-201 by Onsemi

SDL8033-201

Onsemi

SDL8033-201 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications like optical sensors and medical devices.
TOLD322CAB by Toshiba

TOLD322CAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 65 Cel;
NX8560SJ318-CC by Renesas Electronics

NX8560SJ318-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1531; Minimum Operating Temperature: -5 Cel; Semiconductor Material: GaAs; Maximum Forward Current: .15 A;