Broadcom - 295M881

  1. Home
  2. Broadcom - 295M881
295M881 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295M881
Description Laser Diodes;
Datasheet 295M881 Datasheet
In Stock95
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
95 - -

Popular Products

Category Top Products

DL-3038-011 by Onsemi

DL-3038-011

Onsemi

DL-3038-011 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.
TOLD321BCB by Toshiba

TOLD321BCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
TOLD9441MD by Toshiba

TOLD9441MD

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 650; Semiconductor Material: AlGaInP; Maximum Forward Current: .08 A;
NX8571SC421-BA by Renesas Electronics

NX8571SC421-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1542;
NX8570SC501-BA by Renesas Electronics

NX8570SC501-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .3 A;
NX8570SC589-BA-A by Renesas Electronics

NX8570SC589-BA-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1558; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
NX8563LA541-CC-A by Renesas Electronics

NX8563LA541-CC-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .00000000012 s; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
NX8563LF997-BA-A by Renesas Electronics

NX8563LF997-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1599; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A;
NX8567SAS553-BC by Renesas Electronics

NX8567SAS553-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel;
NX8566LE770-BC by Renesas Electronics

NX8566LE770-BC

Renesas Electronics

Laser Diodes;
CQF23/D14 by NXP Semiconductors

CQF23/D14

NXP Semiconductors

CQF23/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
TOLD300 by Toshiba

TOLD300

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: 15 Cel; Maximum Forward Current: .15 A;
NX8567SA610-CC by Renesas Electronics

NX8567SA610-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1561; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
NX8571SC976-BA-AZ by Renesas Electronics

NX8571SC976-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1598; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
CQF25B/D41 by NXP Semiconductors

CQF25B/D41

NXP Semiconductors

CQF25B/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
SFH483501 by Infineon Technologies

SFH483501

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 809; Maximum Forward Voltage: 2.2 V; Minimum Operating Temperature: -50 Cel;
SDL8032-001 by Onsemi

SDL8032-001

Onsemi

SDL8032-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8570SC6087Q-BA by Renesas Electronics

NX8570SC6087Q-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
TOLD321AAC by Toshiba

TOLD321AAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000001 s; Semiconductor Material: InGaAs;
TOLD321BBA by Toshiba

TOLD321BBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310;