Broadcom - 295M890

  1. Home
  2. Broadcom - 295M890
295M890 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number 295M890
Description Laser Diodes;
Datasheet 295M890 Datasheet
In Stock282
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
282 - -

Popular Products

Category Top Products

NX8570SA405-BA by Renesas Electronics

NX8570SA405-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
SFH482201 by Infineon Technologies

SFH482201

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Semiconductor Material: GaAlAs; Minimum Operating Temperature: -10 Cel;
TOLD320ACC by Toshiba

TOLD320ACC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s;
TOLD321ABA by Toshiba

TOLD321ABA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
TOLD9220(S) by Toshiba

TOLD9220(S)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 40 Cel; Peak Wavelength (nm): 660;
OPV300 by Tt Electronics Plc

OPV300

Tt Electronics Plc

OPV300 by Tt Electronics Plc is a SINGLE LASER DIODE with 2.54mm size, emitting at 850nm peak wavelength. It operates b/w 0-70°C, with max forward current of 0.012A and nominal output power of 1.1W. Ideal for applications requiring precise optical alignment and high-power laser emission in compact spaces.
NX8571SC618D-BA by Renesas Electronics

NX8571SC618D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1561;
NX8563LF704-BA-A by Renesas Electronics

NX8563LF704-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1570; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
SDL3144-211 by Onsemi

SDL3144-211

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
NX8567SAS318-CC by Renesas Electronics

NX8567SAS318-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s;
DL-3150-106 by Onsemi

DL-3150-106

Onsemi

DL-3150-106 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.06A and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in through hole mounting setups.
NX7639BB-AA by Renesas Electronics

NX7639BB-AA

Renesas Electronics

LASER DIODE; Spectral Bandwidth: 15 m; Peak Wavelength (nm): 1625; Maximum Forward Current: 1.2 A; Maximum Response Time: .000000002 s; Minimum Operating Temperature: -20 Cel;
TOLD322AAC by Toshiba

TOLD322AAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 65 Cel;
CQF25B/D11 by NXP Semiconductors

CQF25B/D11

NXP Semiconductors

CQF25B/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
TOLD323CBC by Toshiba

TOLD323CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310;
TOLD300 by Toshiba

TOLD300

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: 15 Cel; Maximum Forward Current: .15 A;
TOLD322BBC by Toshiba

TOLD322BBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.5 V;
V105Q121A-940 by Osram Opto Semiconductors

V105Q121A-940

Osram Opto Semiconductors

Osram Opto Semiconductors' V105Q121A-940 is a 940nm laser diode with peak power of 3000W and threshold current of 700mA. Ideal for surface mount applications, it operates b/w -20°C to 85°C temperatures.
TOLD333S by Toshiba

TOLD333S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: .0015 V; Peak Wavelength (nm): 1310; Minimum Operating Temperature: 10 Cel; Maximum Response Time: .0000000003 s;
NX8563LF6091-BA-AZ by Renesas Electronics

NX8563LF6091-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1609; Maximum Forward Voltage: 2.5 V;