Broadcom - A1754W44WWSC

  1. Home
  2. Broadcom - A1754W44WWSC
A1754W44WWSC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number A1754W44WWSC
Description Laser Diodes;
Datasheet A1754W44WWSC Datasheet
In Stock84
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
84 - -

Popular Products

Category Top Products

TOLD321CBA by Toshiba

TOLD321CBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel;
TOLD322CBB by Toshiba

TOLD322CBB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s;
TOLD9140(S) by Toshiba

TOLD9140(S)

Toshiba

LASER DIODE; Nominal Output Power: 20 W; No. of Functions: 1; Peak Wavelength (nm): 685;
TOLD383S by Toshiba

TOLD383S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: .0015 V; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel;
SPL2F98 by Infineon Technologies

SPL2F98

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 3 m; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel;
NX8570SA509-CA by Renesas Electronics

NX8570SA509-CA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1551;
NX6307SJ by Renesas Electronics

NX6307SJ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1.31;
DL-3150-105 by Onsemi

DL-3150-105

Onsemi

DL-3150-105 by Onsemi is a GaAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 to 70 °C, with max forward current of 0.06A and voltage of 2.3V. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNTing.
SDL8033-001 by Onsemi

SDL8033-001

Onsemi

SDL8033-001 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications.
NX8563LB589 by Renesas Electronics

NX8563LB589

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1558; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;
TOLD9151MB by Toshiba

TOLD9151MB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 685; Semiconductor Material: InGaAlP;
NX8570SC6061-BA-A by Renesas Electronics

NX8570SC6061-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1606; Maximum Operating Temperature: 70 Cel;
TOLD323BAA by Toshiba

TOLD323BAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V;
DL-4146-101S by Onsemi

DL-4146-101S

Onsemi

DL-4146-101S by Onsemi is a laser diode with peak wavelength of 405nm, nominal output power of 10W, and max threshold current of 50mA. Commonly used in applications requiring optoelectronic components for through hole mounting setups.
DL-LS1060 by Onsemi

DL-LS1060

Onsemi

DL-LS1060 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and 3V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 70°C, featuring through hole mounting.
TOLD320B by Toshiba

TOLD320B

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1300; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;
V105Q121A-940 by Osram Opto Semiconductors

V105Q121A-940

Osram Opto Semiconductors

Osram Opto Semiconductors' V105Q121A-940 is a 940nm laser diode with peak power of 3000W and threshold current of 700mA. Ideal for surface mount applications, it operates b/w -20°C to 85°C temperatures.
NX8570SA565-BA by Renesas Electronics

NX8570SA565-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1557;
NX8571SC533-BA by Renesas Electronics

NX8571SC533-BA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1553;
NDL5070 by Renesas Electronics

NDL5070

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Spectral Bandwidth: 20 m; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs;