Broadcom - A1754W54WWPG

  1. Home
  2. Broadcom - A1754W54WWPG
A1754W54WWPG by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number A1754W54WWPG
Description Laser Diodes;
Datasheet A1754W54WWPG Datasheet
In Stock421
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
421 - -

Popular Products

Category Top Products

SDL3060 by Onsemi

SDL3060

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 790; Semiconductor Material: GaAlAs; JESD-609 Code: e0;
NX8571SC6048-BA-AZ by Renesas Electronics

NX8571SC6048-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1605;
SFH480443 by Infineon Technologies

SFH480443

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 200000 m; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -10 Cel;
SDL9952-001 by Onsemi

SDL9952-001

Onsemi

SDL9952-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
SFH480301 by Infineon Technologies

SFH480301

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 809; Semiconductor Material: GaAlAs; Shape: RECTANGULAR; Maximum Forward Current: .95 A;
NX8567SAS401-BC by Renesas Electronics

NX8567SAS401-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1540;
NX8565LE461-BC by Renesas Electronics

NX8565LE461-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2 V;
TOLD136 by Toshiba

TOLD136

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .11 A;
TOLD9151MB by Toshiba

TOLD9151MB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 685; Semiconductor Material: InGaAlP;
TOLD321AAC by Toshiba

TOLD321AAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000001 s; Semiconductor Material: InGaAs;
NX8562LB295-CA by Renesas Electronics

NX8562LB295-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;
NX8564LE485-CC by Renesas Electronics

NX8564LE485-CC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1548;
DL-3149-055 by Onsemi

DL-3149-055

Onsemi

DL-3149-055 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
DL3148-011 by Onsemi

DL3148-011

Onsemi

DL3148-011 by Onsemi is a LASER DIODE with 0.055A max forward current, 635nm peak wavelength, and -10 to 40 °C operating temp range. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
NX8567SA287-CC by Renesas Electronics

NX8567SA287-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1528; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
CQF25B/D11 by NXP Semiconductors

CQF25B/D11

NXP Semiconductors

CQF25B/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
STL81005A by Infineon Technologies

STL81005A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1330;
STL51705A by Infineon Technologies

STL51705A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel; Spectral Bandwidth: 5 m; Maximum Forward Voltage: 1.5 V;
TOLD154R by Toshiba

TOLD154R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
NX8560SJ322-BC by Renesas Electronics

NX8560SJ322-BC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000004 s; Peak Wavelength (nm): 1532;