ACPL-217-56BE by Broadcom | Optoelectronics

Image shown is a representation only.

Manufacturer	Broadcom
Manufacturer's Part Number	ACPL-217-56BE
Description	TRANSISTOR OUTPUT OPTOCOUPLER; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; Maximum Forward Current: .05 A; JESD-609 Code: e3; Maximum On State Current: .05 A;
Datasheet	ACPL-217-56BE Datasheet
In Stock	134,032

NAME	DESCRIPTION
Other Names:	ACPL-217-56BE-ND 516-2896-6 516-2896-2 516-2896-1
Maximum Dark Current:	100 nA
Configuration:	SINGLE
Minimum Current Transfer Ratio:	130 %
Sub-Category:	Optocoupler - Transistor Outputs
Maximum Forward Voltage:	1.4 V
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Isolation Voltage:	3000 V
Mounting Feature:	SURFACE MOUNT
Maximum On State Current:	.05 A
Optoelectronic Type:	TRANSISTOR OUTPUT OPTOCOUPLER
Nominal Current Transfer Ratio:	50 %
Maximum Forward Current:	.05 A
No. of Elements:	1
Maximum Power Dissipation:	.15 W
Additional Features:	UL APPROVED, VDE APPROVED
Maximum Operating Temperature:	110 Cel
Minimum Collector-emitter Breakdown Voltage:	80 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
134,032	-	-

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.