Broadcom - AFT-6262-30F

  1. Home
  2. Broadcom - AFT-6262-30F
AFT-6262-30F by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AFT-6262-30F
Description WIDE BAND MEDIUM POWER; Maximum Operating Frequency: 6000 MHz; Maximum Voltage Standing Wave Ratio: 2; Construction: MODULE; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2000 MHz;
Datasheet AFT-6262-30F Datasheet
In Stock280
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Minimum Operating Frequency: 2000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 6000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
280 - -

Popular Products

Category Top Products

HMC429LP4ETR by Hittite Microwave

HMC429LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 5000 MHz;
BGU6101,147 by NXP Semiconductors

BGU6101,147

NXP Semiconductors

The NXP Semiconductors BGU6101,147 is a wide band low power RF amplifier with 4dB gain. It operates b/w 40MHz to 4000MHz, suitable for various RF and microwave applications. With a max supply current of 10mA and operating temperature range from -40°C to 85°C, it is ideal for surface mount installations.
BGA824N6E6327XTSA1 by Infineon Technologies

BGA824N6E6327XTSA1

Infineon Technologies

BGA824N6E6327XTSA1 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 17 dB. It operates in the frequency range of 1550 MHz to 1615 MHz and can handle a max input power of 0 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.
AMMP-6220 by Broadcom

AMMP-6220

Broadcom

Broadcom's AMMP-6220 is a wide band low power RF amplifier with 50 ohm impedance and 18 dB gain. Operating from 6-20 GHz, it features Ni/Pd/Au finish. Ideal for applications requiring high frequency amplification in RF & microwave systems.
CMPA801B030F1 by Wolfspeed

CMPA801B030F1

Wolfspeed

WIDE BAND HIGH POWER;
RF3827 by Rf Micro Devices

RF3827

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;
HMC634LC4 by Analog Devices

HMC634LC4

Analog Devices

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
NBB-300-T1 by Qorvo

NBB-300-T1

Qorvo

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
HMC453ST89ETR by Hittite Microwave

HMC453ST89ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
HMC311SC70E by Hittite Microwave

HMC311SC70E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;
HMC499LC4TR by Analog Devices

HMC499LC4TR

Analog Devices

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.
HMC788ALP2E by Hittite Microwave

HMC788ALP2E

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 10000 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT;
QPA9121SR by Qorvo

QPA9121SR

Qorvo

Qorvo's QPA9121SR is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact surface mount package and low supply current of 130mA at 5V, it offers high performance in RF & microwave systems.
BGA2817,115 by NXP Semiconductors

BGA2817,115

NXP Semiconductors

NXP Semiconductors' BGA2817,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and max operating temp of 85°C. It features surface mounting and tin terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
SGA3463Z by Qorvo

SGA3463Z

Qorvo

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.