Broadcom - AMMC-6241

  1. Home
  2. Broadcom - AMMC-6241
AMMC-6241 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AMMC-6241
Description WIDE BAND LOW POWER; Gain: 18.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 15 dBm; Maximum Operating Frequency: 43000 MHz; Minimum Operating Frequency: 26000 MHz;
Datasheet AMMC-6241 Datasheet
In Stock397
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 15 dBm
Minimum Operating Frequency: 26000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 43000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 18.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
397 - -

Popular Products

Category Top Products

HMC475ST89E by Analog Devices

HMC475ST89E

Analog Devices

HMC475ST89E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 4500 MHz, handling up to 17 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in the temperature range of -40°C to 85°C.
A64 by Tyco Electronics M/a-com

A64

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 6 dBm; Minimum Operating Frequency: 10 MHz;
HMC960LP4E by Analog Devices

HMC960LP4E

Analog Devices

Analog Devices' HMC960LP4E is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It features a surface mount package with 24 terminals and operates b/w -40°C to +85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
HMC994APM5E by Analog Devices

HMC994APM5E

Analog Devices

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.
ZX60-2411BM-S by Mini-circuits

ZX60-2411BM-S

Mini-circuits

ZX60-2411BM-S by Mini-circuits is a COAXIAL RF amplifier with 9 dB Gain, 50 ohm Impedance, and 1.65 VSWR. Ideal for NARROW BAND LOW POWER applications in the frequency range of 1900-2400 MHz.
HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.
SBF4089ZSR by Qorvo

SBF4089ZSR

Qorvo

Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.
M57710-A by Mitsubishi Electric

M57710-A

Mitsubishi Electric

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.
HMC326MS8GETR by Analog Devices

HMC326MS8GETR

Analog Devices

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.
GALI-2+ by Mini-circuits

GALI-2+

Mini-circuits

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.
HMC372LP3E by Analog Devices

HMC372LP3E

Analog Devices

Analog Devices' HMC372LP3E is a wide band low power RF amplifier with 11.5 dB gain, operating from 700 MHz to 1000 MHz. It has a max input power of 15 dBm and operates on a 5V power supply. This component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
HMC6981LS6TR by Hittite Microwave

HMC6981LS6TR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
SST12CP11-QVCE by Microchip Technology

SST12CP11-QVCE

Microchip Technology

SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.
HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.
RA35H1516M by Mitsubishi Electric

RA35H1516M

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
HMC451LC3TR by Analog Devices

HMC451LC3TR

Analog Devices

Analog Devices' HMC451LC3TR is a wide band low power RF amplifier with 14 dB gain, operating from 5-20 GHz. It features a max input power of 10 dBm and operates in temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact ceramic package.
TQP7M9103 by Triquint Semiconductor

TQP7M9103

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;
QPA2611TR7 by Qorvo

QPA2611TR7

Qorvo

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.
HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
HMC311LP3E by Hittite Microwave

HMC311LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;