Broadcom - AMMC-6408-W10

  1. Home
  2. Broadcom - AMMC-6408-W10
AMMC-6408-W10 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AMMC-6408-W10
Description WIDE BAND MEDIUM POWER; Package Equivalence Code: DIE OR CHIP; Gain: 16 dB; Construction: COMPONENT; Minimum Operating Frequency: 6000 MHz; Power Supplies (V): 5;
Datasheet AMMC-6408-W10 Datasheet
In Stock62
NAME DESCRIPTION
No. of Functions: 1
Construction: COMPONENT
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: DIE OR CHIP
Minimum Operating Frequency: 6000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 18000 MHz
Sub-Category: RF/Microwave Amplifiers
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 16 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
62 - -

Popular Products

Category Top Products

AMMP-6220-TR1 by Agilent Technologies

AMMP-6220-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;
MSA-1105-TR1 by Hewlett Packard

MSA-1105-TR1

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;
HMC478ST89E by Analog Devices

HMC478ST89E

Analog Devices

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.
HMC963LC4 by Analog Devices

HMC963LC4

Analog Devices

Analog Devices' HMC963LC4 is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It can handle up to 0 dBm CW input power, ideal for RF & microwave applications requiring high frequency amplification in temperatures ranging from -40°C to 85°C.
XB1007-QT-0G0T by M/a-com Technology Solutions

XB1007-QT-0G0T

M/a-com Technology Solutions

XB1007-QT-0G0T by M/a-com Technology Solutions is a GAAS wide band medium power RF amplifier with a gain of 23 dB. It operates at frequencies ranging from 4000 MHz to 11000 MHz and can handle a max input power of 20 dBm. This surface mount component is suitable for applications in RF and microwave amplification.
SMA3107-TL-E by Sanyo Semiconductor

SMA3107-TL-E

Sanyo Semiconductor

WIDE BAND LOW POWER;
HMC326MS8GE by Analog Devices

HMC326MS8GE

Analog Devices

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
BGA824N6E6327XTSA1 by Infineon Technologies

BGA824N6E6327XTSA1

Infineon Technologies

BGA824N6E6327XTSA1 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 17 dB. It operates in the frequency range of 1550 MHz to 1615 MHz and can handle a max input power of 0 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.
TQP3M9009 by Qorvo

TQP3M9009

Qorvo

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
CMD318P3 by Qorvo

CMD318P3

Qorvo

WIDE BAND LOW POWER;
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
BGU8103 by NXP Semiconductors

BGU8103

NXP Semiconductors

The NXP Semiconductors BGU8103 is a narrow band low power RF amplifier with a gain of 14.5 dB. It operates at frequencies b/w 1559 MHz and 1610 MHz, making it suitable for applications in the RF and microwave field. Its compact surface mount package and low power consumption of 1.6 mA make it an ideal choice for various wireless communication systems.
RDA1005L by Rf Micro Devices

RDA1005L

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; No. of Functions: 1;
RA35H1516M-101 by Mitsubishi Electric

RA35H1516M-101

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.
ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.
HMC903LP3ETR by Analog Devices

HMC903LP3ETR

Analog Devices

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.
QPA2612TR7 by Qorvo

QPA2612TR7

Qorvo

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.
GALI-51F+ by Mini-circuits

GALI-51F+

Mini-circuits

GALI-51F+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring high performance in a compact package. The component is constructed using bipolar technology and can operate in temperatures ranging from -45 to 85°C.
HMC383LC4TR by Analog Devices

HMC383LC4TR

Analog Devices

Analog Devices' HMC383LC4TR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 135mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.