Broadcom - ATF-36077-TRL

  1. Home
  2. Broadcom - ATF-36077-TRL
ATF-36077-TRL by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number ATF-36077-TRL
Description N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation Ambient: .18 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): .045 A; Maximum Drain Current (ID): .045 A;
Datasheet ATF-36077-TRL Datasheet
In Stock440
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .045 A
Maximum Drain Current (Abs) (ID): .045 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .18 W
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
440 - -

Popular Products

Category Top Products

2SK1241 by Onsemi

2SK1241

Onsemi

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;
2SK197 by Hitachi

2SK197

Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: DEPLETION MODE; Maximum Drain Current (ID): .02 A;
934057513135 by NXP Semiconductors

934057513135

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Terminals: 4;
BF256ARLRA by Onsemi

BF256ARLRA

Onsemi

BF256ARLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high frequency amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
SGF17 by Onsemi

SGF17

Onsemi

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;
MMBF5486 by Onsemi

MMBF5486

Onsemi

MMBF5486 by Onsemi is an N-CHANNEL RF FET with DEPLETION MODE. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With a max power dissipation of 0.225W and small outline package style, it offers high performance in compact designs.
2N5952/D74Z by National Semiconductor

2N5952/D74Z

National Semiconductor

2N5952/D74Z by National Semiconductor is a N-CHANNEL RF FET with DEPLETION MODE operation. It has 3 terminals, SILICON element, and 2 pF feedback capacitance. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its JUNCTION technology and THROUGH-HOLE package style.
J309RL1 by Onsemi

J309RL1

Onsemi

J309RL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with THROUGH-HOLE terminals.
934021470215 by NXP Semiconductors

934021470215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE; Transistor Application: SWITCHING;
BLC8G27LS-180AV by NXP Semiconductors

BLC8G27LS-180AV

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
BF245CZL1 by Onsemi

BF245CZL1

Onsemi

BF245CZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BLS7G3135LS-200 by NXP Semiconductors

BLS7G3135LS-200

NXP Semiconductors

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED;
933114330126 by NXP Semiconductors

933114330126

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN; JEDEC-95 Code: TO-92; Maximum Drain Current (ID): .025 A;
BF981 by NXP Semiconductors

BF981

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, DEPLETION MODE; JESD-30 Code: O-PRDB-F4;
934021470235 by NXP Semiconductors

934021470235

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;
ATF-531P8-BLK by Agilent Technologies

ATF-531P8-BLK

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON;
3SK167-2 by Onsemi

3SK167-2

Onsemi

3SK167-2 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring small signal amplification in high-frequency circuits up to 125 °C ambient temperature.
BF998E6327HTSA1 by Infineon Technologies

BF998E6327HTSA1

Infineon Technologies

BF998E6327HTSA1 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has ULTRA HIGH FREQUENCY BAND capabilities. This SMALL OUTLINE transistor is ideal for DUAL GATE applications in SOURCE connections.
BF992-T by NXP Semiconductors

BF992-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Terminal Position: DUAL; Maximum Feedback Capacitance (Crss): .04 pF;
BF245ARL by Onsemi

BF245ARL

Onsemi

BF245ARL by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.