ATF-531P8 by Broadcom | Transistors

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Manufacturer	Broadcom
Manufacturer's Part Number	ATF-531P8
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: C BAND; Transistor Element Material: SILICON; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
Datasheet	ATF-531P8 Datasheet
In Stock	171

NAME	DESCRIPTION
Minimum Power Gain (Gp):	18.5 dB
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.3 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	7 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	C BAND
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
171	-	-

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