ATF-551M4 by Broadcom | Transistors

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Manufacturer	Broadcom
Manufacturer's Part Number	ATF-551M4
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 15.5 dB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: BOTTOM;
Datasheet	ATF-551M4 Datasheet
In Stock	207

NAME	DESCRIPTION
Minimum Power Gain (Gp):	15.5 dB
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.1 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	5 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	X BAND
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
207	-	-

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;