Broadcom - AWP-42107

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.

Sirenza Microdevices' SBB-4089Z is a GAAS wide band low power RF amplifier with 14 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount components in RF & microwave systems.

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.

The Mini-circuits PHA-202+ is a wideband medium power RF amplifier with 13.2 dB gain, operating from 30 MHz to 2700 MHz. It can handle up to 19 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 800 MHz;

Analog Devices' HMC517LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 17-26 GHz. It has a max input power of 2 dBm and operates on a 3V supply. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;

RF3931 by Rf Micro Devices is a ceramic module with a wide band high power RF or microwave device type. It has a max input power of 37 dBm and a gain of 15 dB. This amplifier operates within a frequency range of 0 MHz to 3000 MHz and is suitable for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.