Broadcom - AWT-10563R

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;

Broadcom's MGA-72543-TR1G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

Qorvo's TQP369184 is a wide band low power RF amplifier with 18.8 dB gain and 24 dBm max input power. Operating from -40 to 105°C, it covers frequencies from 0 to 6000 MHz, making it ideal for various RF and microwave applications.

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4500 MHz;

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.

Qorvo's TGA2958-SM is a GAN technology RF amplifier with 25 dB gain, operating from 13-18 GHz. It has a max input power of 20 dBm and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component features surface mounting and requires -2.7 to 20V supply voltage at 70mA max current.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;

WIDE BAND LOW POWER;

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.