Broadcom - AWT-18246-40I

  1. Home
  2. Broadcom - AWT-18246-40I
AWT-18246-40I by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AWT-18246-40I
Description WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Maximum Operating Frequency: 18000 MHz; Maximum Voltage Standing Wave Ratio: 2.2; Construction: MODULE; Maximum Operating Temperature: 100 Cel;
Datasheet AWT-18246-40I Datasheet
In Stock171
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.2
Construction: MODULE
Minimum Operating Frequency: 2000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 18000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -54 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
171 - -

Popular Products

Category Top Products

HMC561LP3E by Analog Devices

HMC561LP3E

Analog Devices

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.
RF5110GTR7 by Rf Micro Devices

RF5110GTR7

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; JESD-609 Code: e3; Maximum Supply Current: 2400 mA;
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC478MP86E by Hittite Microwave

HMC478MP86E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 0 MHz;
MGA-81563-TR1 by Hewlett Packard

MGA-81563-TR1

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;
HMC460LC5TR by Analog Devices

HMC460LC5TR

Analog Devices

HMC460LC5TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC499LC4 by Hittite Microwave

HMC499LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9 dB;
AMMP-6220 by Agilent Technologies

AMMP-6220

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 20000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 6000 MHz; Construction: COMPONENT; Gain: 18 dB;
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
MGA-31689-TR1G by Broadcom

MGA-31689-TR1G

Broadcom

Broadcom's MGA-31689-TR1G is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. Ideal for wideband medium-power applications due to its surface-mount construction and characteristic impedance of 50 ohms.
MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
HMC465LP5ETR by Hittite Microwave

HMC465LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
ZX60-2411BM-S by Mini-circuits

ZX60-2411BM-S

Mini-circuits

ZX60-2411BM-S by Mini-circuits is a COAXIAL RF amplifier with 9 dB Gain, 50 ohm Impedance, and 1.65 VSWR. Ideal for NARROW BAND LOW POWER applications in the frequency range of 1900-2400 MHz.
NPA1006A by M/a-com Technology Solutions

NPA1006A

M/a-com Technology Solutions

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.
HMC455LP3 by Analog Devices

HMC455LP3

Analog Devices

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.
HMC453ST89ETR by Analog Devices

HMC453ST89ETR

Analog Devices

HMC453ST89ETR by Analog Devices is a wide band medium power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is surface mountable. This amplifier is commonly used in RF and microwave applications.
HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.
SBB-2089Z by Sirenza Microdevices

SBB-2089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.
MW7IC2750NBR1 by Freescale Semiconductor

MW7IC2750NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; No. of Functions: 1; Maximum Input Power (CW): 30 dBm;
MMG3002NT1 by NXP Semiconductors

MMG3002NT1

NXP Semiconductors

NXP Semiconductors' MMG3002NT1 is a wide band low power RF amplifier with 19.3 dB gain, handling up to 12 dBm CW input power. Operating from 40 MHz to 3600 MHz, it's ideal for RF and microwave applications requiring high performance in a compact form factor.