Broadcom - AWT-18688R

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.

Analog Devices' HMC478MP86E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handles up to 5 dBm input power, and has a compact surface mount package ideal for RF applications in temperatures ranging from -40 to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Power Supplies (V): 5;

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

SGA6286Z by Qorvo is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, handling up to 18 dBm CW input power. This component is ideal for surface mount applications in RF and microwave systems.

Broadcom's MGA-86576-TR1 is a GAAS RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications in RF & microwave systems. The component features surface mounting and requires a 5V power supply with a max current draw of 22mA.

Broadcom's MGA-81563-TR1G is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC478SC70E is a wide band low power RF amplifier with 23 dB gain and 5 dBm CW input power. Operating from -40 to 85°C, it has a max frequency of 4 GHz. Ideal for RF & microwave applications, this component features a plastic/epoxy package and requires a 5V supply at 82 mA.

HMC441LM1 by Analog Devices is a wide band low power RF amplifier with 11 dB gain and 15 dBm max input power. It operates b/w 7-15.5 GHz, has a characteristic impedance of 50 ohms, and requires a 5V power supply. Ideal for RF & microwave applications requiring high performance in a compact package.

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

HMC636ST89 by Analog Devices is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications, this component is designed for surface mounting in RF and microwave systems.

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 50 MHz;

HMC634LC4TR by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5V supply. It has a frequency range of 5-20 GHz, ideal for RF and microwave applications. With ceramic packaging and surface mounting feature, it offers high performance in temperatures ranging from -40 to 85°C.