Broadcom - AWT186N30T34

XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.

Mini-circuits PGA-1021+ is a wideband low power RF amplifier with 13.6 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 28 dBm and operates on a 3.3V supply, making it ideal for RF and microwave applications requiring high frequency amplification in compact setups.

Analog Devices' HMC8410LP2FE is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40°C to 85°C.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Maximum Supply Current: 38 mA; Power Supplies (V): 15; Maximum Operating Temperature: 50 Cel;

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;

Qorvo's RF3827 is a wide band medium power amplifier with 20dB gain, operating from 5MHz to 1500MHz. It has a max input power of 13dBm and VSWR of 20, suitable for RF applications requiring up to 8V supply voltage. The component is constructed using GaAs technology in a plastic/epoxy package, ideal for surface mounting in various RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.

Broadcom's MGA-81563 is a GAAS RF amplifier with 6 terminals, operating from -40°C to 85°C. It requires 3V power supply, draws max 51mA current, and has a surface mount package. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

NARROW BAND HIGH POWER;

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;

Mitsubishi Electric's RA35H1516M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 154-162 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and supports power supplies of 5V and 12.5V.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.