Broadcom - HLPT-B5D0-00000

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HLPT-B5D0-00000 by Broadcom

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Manufacturer Broadcom
Manufacturer's Part Number HLPT-B5D0-00000
Description PHOTO TRANSISTOR;
Datasheet HLPT-B5D0-00000 Datasheet
In Stock85
NAME DESCRIPTION
Optoelectronic Type: PHOTO TRANSISTOR
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Pricing (USD)

Qty. Unit Price Ext. Price
85 $0.950 $80.750

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SFH302 by Infineon Technologies

SFH302

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 880; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
SDP8406-003 by Honeywell Sensing And Control

SDP8406-003

Honeywell Sensing And Control

SDP8406-003 by Honeywell is a single phototransistor with max temp of 85°C and min temp of -40°C. It has a nominal light current of 3.4mA, dark current of 100nA, and response time of 0.000015s. With a collector-emitter breakdown voltage of 30V, it is ideal for optoelectronic applications requiring precise light detection.
SFH303FA-4 by Infineon Technologies

SFH303FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;
OP800A by Optotek

OP800A

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Shape: ROUND; Peak Wavelength (nm): 890;
BPW77NA by Temic Semiconductors

BPW77NA

Temic Semiconductors

PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Configuration: SINGLE; Maximum Dark Current: 100 nA;
TPS616(BC,F) by Toshiba

TPS616(BC,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;
SFH314FA by Infineon Technologies

SFH314FA

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 870; JESD-609 Code: e0;
SPS235C by Onsemi

SPS235C

Onsemi

The Onsemi SPS235C is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting, it can handle max on state current of 0.03A and dark current up to 1000nA.
TPS617 by Toshiba

TPS617

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 1.5 mm; Peak Wavelength (nm): 870; Minimum Collector-emitter Breakdown Voltage: 30 V;
TPS613 by Toshiba

TPS613

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: NO; No. of Functions: 1; Maximum Operating Temperature: 75 Cel; Size: 3 mm;
TPS615 by Toshiba

TPS615

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .075 W; Nominal Light Current: .02 mA; Infrared (IR) Range: YES;
SD5410-002 by Micro Switch

SD5410-002

Micro Switch

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Dark Current: 250 nA;
BPX81-4 by Infineon Technologies

BPX81-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum On State Current: .05 A;
LS617 by Texas Instruments

LS617

Texas Instruments

LS617 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection, it has a collector-emitter breakdown voltage of 50V.
TPS612-B by Toshiba

TPS612-B

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Peak Wavelength (nm): 870; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .024 mA; Maximum Dark Current: 100 nA;
TPS606(LB)-B by Toshiba

TPS606(LB)-B

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;
SFH3410-2 by Infineon Technologies

SFH3410-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 570; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .02 A;
BPX81 by Infineon Technologies

BPX81

Infineon Technologies

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.
SFH3410-1 by Infineon Technologies

SFH3410-1

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0; Peak Wavelength (nm): 570;
SFH500 by Infineon Technologies

SFH500

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 825; Maximum On State Current: .02 A; JESD-609 Code: e0;