Broadcom - HSCH-9101

BAR11 by STMicroelectronics is a single mixer diode with a Schottky technology, operating in the very high frequency to ultra high frequency band. It has a max forward voltage of 1V and max output current of 0.02A, making it suitable for applications requiring microwave mixing and detection at temperatures ranging from -65 °C to 200°C.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-282K-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.34V and reverse current of 0.1uA, suitable for microwave applications requiring high frequency performance in temperatures ranging from -65 to 150°C.

HSMS-281C-BLKG by Broadcom is a Schottky mixer diode with 2 elements, max forward voltage of 0.41V, and 2pF diode capacitance. It is ideal for microwave applications due to its series connected configuration, small outline package style, and operating temperature up to 150°C. The diode's center tap design and dual terminal position make it suitable for surface mount applications requiring high performance in a compact form factor.

MIXER DIODE; Terminal Position: QUAD; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

TMMBAR10 by STMicroelectronics is a Schottky mixer diode with a max forward voltage of 0.41V and max output current of 0.035A. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring microwave mixing and detection at temperatures ranging from -65 °C to 200°C.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Toshiba's 1SS295-TE85L(F) is a Schottky mixer diode with ultra-high frequency band, 0.9 pF capacitance, and 0.32 V forward voltage. Ideal for microwave applications due to its dual-element design and small outline package style.

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5.5 dB; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON;

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Diode Element Material: SILICON; Maximum Noise Figure: 5.5 dB;

HSMS-2808-TR1G by Broadcom is a Schottky mixer diode with 4 elements, 2 pF capacitance, and 70V peak reverse voltage. It comes in a small outline package for surface mount applications at up to 150°C. Ideal for microwave mixing and detection due to its high performance and reliability.

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NSR15SDW1T4G by Onsemi is a Schottky mixer diode with 2 elements, max. reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C, has a peak reflow temp of 260°C, and is ideal for microwave applications due to its low capacitance and high reverse current specs.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

CA3019 by Onsemi is a COMPLEX microwave mixer & detector diode with 10 terminals. It features 6 SILICON diode elements and a max power dissipation of 0.12 W. Ideal for RF applications, radar systems, and signal processing due to its high-performance MIXER DIODE technology.

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MMDL770T1 by Onsemi is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 1V. This small outline diode is ideal for applications requiring high-frequency signal mixing and detection.

BAT15-03WE6327 by Infineon: Schottky mixer diode for X Band applications. Features low barrier Schottky technology with 0.35 pF capacitance. Operates from -55 to 150 °C, with 0.1 W power dissipation and 4 V breakdown voltage.