Broadcom - MSA-0300-GP2

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;

Analog Devices' HMC799LP3E is a wide band low power RF amplifier with 42 dB gain. Operating from -40°C to 85°C, it covers frequencies from 0 MHz to 700 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

Qorvo's SPF5043ZSR is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. This wide band low power device is ideal for applications requiring surface mount components in RF and microwave systems.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.

HMC634LC4TR by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5V supply. It has a frequency range of 5-20 GHz, ideal for RF and microwave applications. With ceramic packaging and surface mounting feature, it offers high performance in temperatures ranging from -40 to 85°C.

Broadcom's ABA-31563-BLKG is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 3500 MHz. It has a max input power of 15 dBm and VSWR of 1.5, suitable for surface mount applications in RF & microwave systems.

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

MAX2659ELT/V+T by Analog Devices is a RF amplifier with 1.8/3.3V power supplies, BICMOS technology, and 5.6mA max supply current. It operates b/w -40 to 85°C, has AEC-Q100 screening level, and comes in a plastic/epoxy package. Ideal for RF & microwave applications requiring surface mounting feature.

Analog Devices' HMC1082LP4ETR is a GaAs technology RF amplifier with 24 terminals, operating b/w -40°C to 85°C. It has a power supply of 5V and is designed for wideband medium-power applications in RF and microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting features.

Analog Devices' HMC451LC3TR is a wide band low power RF amplifier with 14 dB gain, operating from 5-20 GHz. It features a max input power of 10 dBm and operates in temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact ceramic package.

TRF37D73IDSGT by Texas Instruments is a wide band low power RF amplifier with 20dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply with a current draw of 65mA. Ideal for applications requiring high frequency amplification in compact designs.

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.