Broadcom - MSA-0886G

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.

Analog Devices' HMC963LC4 is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It can handle up to 0 dBm CW input power, ideal for RF & microwave applications requiring high frequency amplification in temperatures ranging from -40°C to 85°C.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.

MAX2232EEE by Maxim Integrated is a RF amplifier with 23.9 dB gain, operating frequency range of 800-1000 MHz, and VSWR of 1.5. It is ideal for narrowband medium power applications requiring a max input power of 10 dBm in plastic/epoxy package suitable for surface mounting.

NARROW BAND LOW POWER;

The Mini-circuits GALI-6 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for surface mount applications in RF & microwave systems, it offers VSWR of 2 and operates b/w -45°C to +85°C.

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;

Infineon's BGA622H6820XTSA1 is a wide band low power RF amplifier with 13.6 dB gain, operating from 500 MHz to 6000 MHz. It can handle up to 6 dBm input power and operates b/w -65°C to 150°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

MAX2611EUS+T by Analog Devices is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;

Analog Devices' HMC478MP86E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handles up to 5 dBm input power, and has a compact surface mount package ideal for RF applications in temperatures ranging from -40 to 85°C.

NXP Semiconductors' BGA6130,118 is an RF & Microwave Amplifier with 3.6V power supply, 8 terminals, and 250mA max supply current. It features a plastic/epoxy package body material and nickel palladium gold terminal finish. Ideal for surface mount applications in various electronic devices.