Broadcom - MSA-0900-GP6

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.

Qorvo's RF3827 is a wide band medium power amplifier with 20dB gain, operating from 5MHz to 1500MHz. It has a max input power of 13dBm and VSWR of 20, suitable for RF applications requiring up to 8V supply voltage. The component is constructed using GaAs technology in a plastic/epoxy package, ideal for surface mounting in various RF and microwave systems.

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -55 Cel;

WIDE BAND LOW POWER; Minimum Operating Frequency: 10 MHz; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -55 Cel; Characteristic Impedance: 50 ohm;

Analog Devices' HMC7950LS6TR is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

TE Connectivity's A33 RF & Microwave Amplifier features 15V power supply, 4 terminals, and 16mA max supply current. With a metal package body, it operates b/w 0-50°C. Ideal for applications requiring reliable amplification in various temperature conditions.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

Broadcom's MGA-632P8-BLKG is a GAAS technology RF amplifier with 16dB gain, operating from 1400MHz to 3800MHz. It has a max input power of 20dBm and is ideal for wideband low-power applications. The component features surface mounting and matte tin terminal finish on an 8-terminal plastic/epoxy package body.

CMA-83LN+ by Mini-circuits is a wide band low power RF amplifier with 18.5 dB gain, operating from 500 MHz to 8000 MHz. It has a max input power of 16 dBm and VSWR of 1.19, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;

WIDE BAND LOW POWER;

HMC451LP3E by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18000 MHz. With a max input power of 10 dBm, it is ideal for wide band low power applications in RF and microwave systems requiring surface mount components.

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;