NQ83C92C by Broadcom | Telecommunications

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Manufacturer	Broadcom
Manufacturer's Part Number	NQ83C92C
Description	ETHERNET TRANSCEIVER; Temperature Grade: COMMERCIAL; Terminal Form: J BEND; No. of Terminals: 28; Package Code: QCCJ; Package Shape: SQUARE;
Datasheet	NQ83C92C Datasheet
In Stock	370

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Telecom IC Type:	ETHERNET TRANSCEIVER
Sub-Category:	Network Interfaces
Surface Mount:	YES
Maximum Supply Current:	120 mA
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
No. of Terminals:	28
No. of Transceivers:	1
Qualification:	Not Qualified
Package Equivalence Code:	LDCC28,.5SQ
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
Technology:	CMOS
JESD-30 Code:	S-PQCC-J28
Package Shape:	SQUARE
Nominal Negative Supply Voltage:	-9 V
Terminal Form:	J BEND
Maximum Operating Temperature:	70 Cel
Package Code:	QCCJ
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	-9

Pricing (USD)

Qty.	Unit Price	Ext. Price
370	-	-

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;