Broadcom - PPA-2013

  1. Home
  2. Broadcom - PPA-2013
PPA-2013 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number PPA-2013
Description WIDE BAND LOW POWER; Maximum Operating Frequency: 2000 MHz; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 17 dBm; Minimum Operating Frequency: 500 MHz;
Datasheet PPA-2013 Datasheet
In Stock152
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Maximum Input Power (CW): 17 dBm
Minimum Operating Frequency: 500 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -55 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
152 - -

Popular Products

Category Top Products

MGA-86576-STR by Hewlett Packard

MGA-86576-STR

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC636ST89ETR by Hittite Microwave

HMC636ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 16 dBm;
MGA-62563-BLK by Broadcom

MGA-62563-BLK

Broadcom

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
GALI-2+ by Mini-circuits

GALI-2+

Mini-circuits

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.
MMG3H21NT1 by NXP Semiconductors

MMG3H21NT1

NXP Semiconductors

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.
HMC478MP86E by Analog Devices

HMC478MP86E

Analog Devices

Analog Devices' HMC478MP86E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handles up to 5 dBm input power, and has a compact surface mount package ideal for RF applications in temperatures ranging from -40 to 85°C.
PGA-103+ by Mini-circuits

PGA-103+

Mini-circuits

Mini-circuits' PGA-103+ is a wideband low-power RF amplifier with 14.7 dB gain, operating from 50 MHz to 4 GHz. It can handle up to 26 dBm CW input power and has a temperature range of -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
ADL8111ACCZN by Analog Devices

ADL8111ACCZN

Analog Devices

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
RF6886TR7 by Qorvo

RF6886TR7

Qorvo

Qorvo's RF6886TR7 is a wide band high power amplifier with 31dB gain, operating from 433MHz to 470MHz. It has a max input power of 12dBm and VSWR of 5, suitable for RF applications requiring high power amplification in the frequency range. The component is designed for surface mount installation in various electronic systems.
MSA-0686-BLKG by Agilent Technologies

MSA-0686-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;
ABA-31563-BLKG by Agilent Technologies

ABA-31563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
CMPA2738060F by Wolfspeed

CMPA2738060F

Wolfspeed

WIDE BAND HIGH POWER;
HMC462LP5 by Analog Devices

HMC462LP5

Analog Devices

HMC462LP5 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 2-20 GHz, handles up to 18 dBm input power, and has a max temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact surface mount package.
HMC960LP4E by Analog Devices

HMC960LP4E

Analog Devices

Analog Devices' HMC960LP4E is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It features a surface mount package with 24 terminals and operates b/w -40°C to +85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
HMC506LP4ETR by Hittite Microwave

HMC506LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
MGA-62563-TR1G by Agilent Technologies

MGA-62563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;
HMC311SC70ETR by Analog Devices

HMC311SC70ETR

Analog Devices

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.
SKY65160-11 by Skyworks Solutions

SKY65160-11

Skyworks Solutions

RF/Microwave Amplifiers;
TQP3M9018 by Qorvo

TQP3M9018

Qorvo

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.