Broadcom - PPA-6213R

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Power Supplies (V): 5;

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.

The Qorvo NBB-310 is a ceramic RF amplifier with 20 dBm CW input power, 2 VSWR, and 9 dB gain. Ideal for wideband low-power applications in the 0-12000 MHz range. Suitable for surface mount installations with a temperature range of -45 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

Analog Devices' HMC963LC4TR is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It features a max input power of 0 dBm, 3.5V supply voltage, and ceramic package ideal for surface mount applications in RF & microwave systems.

ADA-4643-BLKG by Broadcom is a wide band low power RF amplifier with 15.5 dB gain, operating from 0-2500 MHz. It features a max input power of 18 dBm and VSWR of 1.6, suitable for RF & microwave applications requiring high performance in plastic/epoxy package.

SPF-5043Z by Sirenza Microdevices is a 50 ohm wide band low power RF amplifier with gain of 6.7 dB. It operates b/w 100 MHz to 4000 MHz, handling up to 25 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -40°C to 85°C.

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 800 MHz;

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

NARROW BAND HIGH POWER;

RA07N4047M-101 by Mitsubishi Electric is a RF amplifier module with max input power of 14.77 dBm and VSWR of 4. It operates in the frequency range of 400-470 MHz, ideal for narrowband high-power applications. With a temperature range from -30 to 90°C, it is suitable for various RF and microwave systems.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;