Broadcom - TO293BU-EDX

  1. Home
  2. Broadcom - TO293BU-EDX
TO293BU-EDX by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number TO293BU-EDX
Description Laser Diodes;
Datasheet TO293BU-EDX Datasheet
In Stock476
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
476 - -

Popular Products

Category Top Products

NX8570SC634-BA-AZ by Renesas Electronics

NX8570SC634-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1563; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
TOLD322BCA by Toshiba

TOLD322BCA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 80 Cel;
NX8570SA358-BA by Renesas Electronics

NX8570SA358-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1536; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
NX8570SC6087-BA-A by Renesas Electronics

NX8570SC6087-BA-A

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1608; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel;
SDL4032 by Onsemi

SDL4032

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 830;
DL-LS42 by Onsemi

DL-LS42

Onsemi

DL-LS42 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.
TOLD322CBC by Toshiba

TOLD322CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel;
NX8567SA449-BC by Renesas Electronics

NX8567SA449-BC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1544; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
STM81004A by Infineon Technologies

STM81004A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Spectral Bandwidth: 5 m; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 1.5 V;
NX8567SA342-CC by Renesas Electronics

NX8567SA342-CC

Renesas Electronics

LASER DIODE; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -5 Cel;
TOLD300S by Toshiba

TOLD300S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 15 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;
NX8563LAS381-CD-A by Renesas Electronics

NX8563LAS381-CD-A

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1538; Maximum Forward Voltage: 2 V; Maximum Forward Current: .3 A; Maximum Response Time: .00000000012 s;
NX6307SJ by Renesas Electronics

NX6307SJ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1.31;
NX8501CC-BA by Renesas Electronics

NX8501CC-BA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
DL3149-053 by Onsemi

DL3149-053

Onsemi

DL3149-053 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
TOLD321AAB by Toshiba

TOLD321AAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel; Maximum Response Time: .000000001 s;
HL1511AF by Renesas Electronics

HL1511AF

Renesas Electronics

LASER DIODE; Nominal Output Power: 1 W; Peak Wavelength (nm): 1550; Maximum Operating Temperature: 35 Cel; Maximum Threshold Current: 25 mA; Shape: RECTANGULAR;
TOLD313 by Toshiba

TOLD313

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 60 Cel;
54-00164 by Viavi Solutions

54-00164

Viavi Solutions

Viavi Solutions' 54-00164 Laser Diode operates at peak wavelength of 830nm with spectral bandwidth of 3m. It can withstand temperatures from -20 to 50°C, making it suitable for through hole mounting applications in various industries.
SFH4423 by Infineon Technologies

SFH4423

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 80 Cel; Maximum Forward Voltage: 1.8 V;