Broadcom - TO295J-AAXA

  1. Home
  2. Broadcom - TO295J-AAXA
TO295J-AAXA by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number TO295J-AAXA
Description Laser Diodes;
Datasheet TO295J-AAXA Datasheet
In Stock369
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
369 - -

Popular Products

Category Top Products

DL-4038-031 by Onsemi

DL-4038-031

Onsemi

DL-4038-031 by Onsemi is a Laser Diode with 0.08A max forward current, 635nm peak wavelength, and 2.6V max forward voltage. It operates b/w 10 °C to 50°C, suitable for through-hole mounting applications in optoelectronics.
TOLD322ABB by Toshiba

TOLD322ABB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel;
OD-8345 by Renesas Electronics

OD-8345

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 1.6 V; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 85 Cel;
NX8564LE565-BC by Renesas Electronics

NX8564LE565-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Forward Current: .15 A;
TOLD322AAA by Toshiba

TOLD322AAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: 0 Cel;
TOED313 by Toshiba

TOED313

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000035 s; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
DL-3149-070 by Onsemi

DL-3149-070

Onsemi

DL-3149-070 by Onsemi is a 695nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications like medical devices and industrial sensors.
DL-3149-054 by Onsemi

DL-3149-054

Onsemi

DL-3149-054 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8570SC505-BA-AZ by Renesas Electronics

NX8570SC505-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1550; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
NX8570SC6053D-BA-AZ by Renesas Electronics

NX8570SC6053D-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
TOLD9462MD by Toshiba

TOLD9462MD

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Size: 1.8 mm; No. of Functions: 1; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
CQF23/D12 by NXP Semiconductors

CQF23/D12

NXP Semiconductors

CQF23/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
TOLD320CBA by Toshiba

TOLD320CBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;
TOLD360 by Toshiba

TOLD360

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1550; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V;
NX8570SC883D-BA-AZ by Renesas Electronics

NX8570SC883D-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1588; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;
NX8562LF671-BA-A by Renesas Electronics

NX8562LF671-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1567;
NX8571SC811-BA by Renesas Electronics

NX8571SC811-BA

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1581; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
DL-5147-041 by Onsemi

DL-5147-041

Onsemi

DL-5147-041 by Onsemi is a LASER DIODE with Peak Wavelength of 655nm, Max Forward Current of 0.11A, and Max Forward Voltage of 2.8V. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in various industries.
NX8571SC318-BA-AZ by Renesas Electronics

NX8571SC318-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1532; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V;
NX8570SC976-BA-A by Renesas Electronics

NX8570SC976-BA-A

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1597; Maximum Forward Current: .3 A;