Broadcom - TO295J-BAXC

  1. Home
  2. Broadcom - TO295J-BAXC
TO295J-BAXC by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number TO295J-BAXC
Description Laser Diodes;
Datasheet TO295J-BAXC Datasheet
In Stock251
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
251 - -

Popular Products

Category Top Products

SFH483406 by Infineon Technologies

SFH483406

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: 1.8 A; Maximum Operating Temperature: 60 Cel; Semiconductor Material: GaAlAs;
TOLD323BAB by Toshiba

TOLD323BAB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: 0 Cel;
DL-3038-011 by Onsemi

DL-3038-011

Onsemi

DL-3038-011 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications in various industries.
SDL3144 by Onsemi

SDL3144

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 780;
NX7639BB-AA by Renesas Electronics

NX7639BB-AA

Renesas Electronics

LASER DIODE; Spectral Bandwidth: 15 m; Peak Wavelength (nm): 1625; Maximum Forward Current: 1.2 A; Maximum Response Time: .000000002 s; Minimum Operating Temperature: -20 Cel;
NX8563LB311 by Renesas Electronics

NX8563LB311

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1531; Maximum Operating Temperature: 65 Cel;
NX8565LE581-BC by Renesas Electronics

NX8565LE581-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1558;
SDL4034 by Onsemi

SDL4034

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 780; Semiconductor Material: GaAlAs;
CQF25A/D12 by NXP Semiconductors

CQF25A/D12

NXP Semiconductors

CQF25A/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With a rapid response time of just 0.5 ns, it's perfect for precision tasks.
NX8565LE761-CC by Renesas Electronics

NX8565LE761-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Semiconductor Material: GaAs; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s;
NX8570SC878-BA-A by Renesas Electronics

NX8570SC878-BA-A

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1587; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
TOLD159 by Toshiba

TOLD159

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel;
DL-LS42 by Onsemi

DL-LS42

Onsemi

DL-LS42 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.
NX8570SC997-BA by Renesas Electronics

NX8570SC997-BA

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1600; Minimum Operating Temperature: -5 Cel;
TOLD323CBC by Toshiba

TOLD323CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310;
NX8563LF581-BA-A by Renesas Electronics

NX8563LF581-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1558; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
TOLD321AAA by Toshiba

TOLD321AAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310;
NX8570SC537-BA-A by Renesas Electronics

NX8570SC537-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1553; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
TOLD300A by Toshiba

TOLD300A

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000003 s; Maximum Forward Current: .15 A; Minimum Operating Temperature: 15 Cel; Maximum Forward Voltage: 1.5 V;
NX8571SC650-BA by Renesas Electronics

NX8571SC650-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1565; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V;