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| Manufacturer | Broadcom |
|---|---|
| Manufacturer's Part Number | VMMK-1218-TR1G |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Transistor Element Material: GALLIUM ARSENIDE; Maximum Drain Current (Abs) (ID): .1 A; |
| Datasheet | VMMK-1218-TR1G Datasheet |
| In Stock | 651 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .1 A |
| Sub-Category: | FET RF Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-XBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | KU BAND |
| Case Connection: | SOURCE |
| Maximum Power Dissipation Ambient: | .3 W |
| Moisture Sensitivity Level (MSL): | 1 |
| Minimum Power Gain (Gp): | 6.7 dB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 5 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .1 A |
| Peak Reflow Temperature (C): | 260 |
