NE3210S01-T1B by California Eastern Laboratories | Transistors

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Manufacturer	California Eastern Laboratories
Manufacturer's Part Number	NE3210S01-T1B
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; JESD-30 Code: O-PRDB-G4; Package Body Material: PLASTIC/EPOXY;
Datasheet	NE3210S01-T1B Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	12 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HETERO-JUNCTION
Maximum Drain Current (ID):	.015 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-PRDB-G4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Additional Features:	HIGH RELIABILITY
Highest Frequency Band:	X BAND
Case Connection:	SOURCE

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