Central Semiconductor - 2N4416ATIN/LEAD

  1. Home
  2. Central Semiconductor - 2N4416ATIN/LEAD
2N4416ATIN/LEAD by Central Semiconductor

Image shown is a representation only.

Manufacturer Central Semiconductor
Manufacturer's Part Number 2N4416ATIN/LEAD
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0;
Datasheet 2N4416ATIN/LEAD Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .3 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 200 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NE3210S01-T1B by Nec Electronics

NE3210S01-T1B

Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: SILICON; Highest Frequency Band: KU BAND;
BF992,215 by NXP Semiconductors

BF992,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
SGF16 by Onsemi

SGF16

Onsemi

N-CHANNEL; Maximum Drain Current (Abs) (ID): .06 A; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;
2N4416 by Inter F E T

2N4416

Inter F E T

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; JESD-30 Code: O-MBCY-W4;
2N3823 by Inter F E T

2N3823

Inter F E T

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Terminal Form: WIRE;
BF245RL1 by Onsemi

BF245RL1

Onsemi

BF245RL1 by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features SINGLE configuration, 0.1A ID, and DEPLETION MODE operation in a PLASTIC/EPOXY package with THROUGH-HOLE terminals.
BF909AR by NXP Semiconductors

BF909AR

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Package Shape: RECTANGULAR; Qualification: Not Qualified;
BF994SA-GS08 by Temic Semiconductors

BF994SA-GS08

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
BLF9G24LS-230V by NXP Semiconductors

BLF9G24LS-230V

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
BF991-T by NXP Semiconductors

BF991-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 4;
BF904A by NXP Semiconductors

BF904A

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;
2N4416A by Vishay Intertechnology

2N4416A

Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Power Gain (Gp): 10 dB; Terminal Finish: TIN LEAD;
BF998 by Vishay Telefunken

BF998

Vishay Telefunken

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
BF992 by NXP Semiconductors

BF992

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .04 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
J310 by Temic Semiconductors

J310

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;
2N4416 by Asi Semiconductor

2N4416

Asi Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;
FHX35X by Sumitomo Electric Industries

FHX35X

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Body Material: UNSPECIFIED;
BF513-T by NXP Semiconductors

BF513-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Terminal Form: GULL WING;
FSX017LG by Eudyna Devices

FSX017LG

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: RADIAL; No. of Terminals: 4;
BF256ARLRA by Onsemi

BF256ARLRA

Onsemi

BF256ARLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high frequency amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.