Central Semiconductor - MJE350

  1. Home
  2. Central Semiconductor - MJE350
MJE350 by Central Semiconductor

Image shown is a representation only.

Manufacturer Central Semiconductor
Manufacturer's Part Number MJE350
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
Datasheet MJE350 Datasheet
In Stock11,019
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 20.8 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-126
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e0
Minimum Operating Temperature: -65 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 300 V
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11,019 - -

Popular Products

Category Top Products

TIP32C by New Jersey Semiconductor Products

TIP32C

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 3 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON;
BUV48A by Central Semiconductor

BUV48A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-609 Code: e0;
TIP112 by Microsemi

TIP112

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; Terminal Finish: TIN LEAD; JESD-609 Code: e0;
BD243C by Fairchild Semiconductor

BD243C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; No. of Elements: 1;
MJD45H11T4 by Motorola

MJD45H11T4

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
TIP120 by Swampscott Electronics

TIP120

Swampscott Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
BUL58D by STMicroelectronics

BUL58D

STMicroelectronics

BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.
TIP50 by Bourns

TIP50

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 10;
NJVMJD44H11G by Onsemi

NJVMJD44H11G

Onsemi

NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).
TIP41C by Microsemi

TIP41C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
TIP127 by Central Semiconductor

TIP127

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
2N3055 by Asi Semiconductor

2N3055

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP35C by Kec

TIP35C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 100 V;
D44H8 by Fairchild Semiconductor

D44H8

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
BUV48A by Tt Electronics Plc

BUV48A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: THROUGH-HOLE;
MJE340 by Fairchild Semiconductor

MJE340

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30;
TIP110 by Baneasa S A

TIP110

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 1000; Package Shape: RECTANGULAR;
BD140 by Crimson Semiconductor

BD140

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
TIP127 by Onsemi

TIP127

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
BDX53C by STMicroelectronics

BDX53C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;