Changzhou Galaxy Century Microelectronics - DB107S

DB107S by Changzhou Galaxy Century Microelectronics

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Manufacturer	Changzhou Galaxy Century Microelectronics
Manufacturer's Part Number	DB107S
Description	BRIDGE RECTIFIER DIODE; Surface Mount: YES; No. of Elements: 4; Peak Reflow Temperature (C): 260; Maximum Forward Voltage (VF): 1.1 V; Maximum Output Current: 1 A;
Datasheet	DB107S Datasheet

DB107S Technical Details

NAME	DESCRIPTION
Maximum Non Repetitive Peak Forward Current:	30 A
Diode Element Material:	SILICON
Maximum Forward Voltage (VF):	1.1 V
Config:	BRIDGE, 4 ELEMENTS
Diode Type:	BRIDGE RECTIFIER DIODE
No. of Elements:	4
Maximum Output Current:	1 A
Maximum Repetitive Peak Reverse Voltage:	1000 V
Maximum Operating Temperature:	125 Cel
Peak Reflow Temperature (C):	260
Sub-Category:	Bridge Rectifier Diodes
Surface Mount:	YES

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