Changzhou Galaxy Century Microelectronics - MMBTH10

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MMBTH10 by Changzhou Galaxy Century Microelectronics

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Manufacturer Changzhou Galaxy Century Microelectronics
Manufacturer's Part Number MMBTH10
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Datasheet MMBTH10 Datasheet
In Stock1,261,886
NAME DESCRIPTION
Nominal Transition Frequency (fT): 650 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .35 W
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 25 V
Maximum Collector-Base Capacitance: .7 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: .5 V
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Pricing (USD)

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