Comset Semiconductors - TIP147

  1. Home
  2. Comset Semiconductors - TIP147
TIP147 by Comset Semiconductors

Image shown is a representation only.

Manufacturer Comset Semiconductors
Manufacturer's Part Number TIP147
Description PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
Datasheet TIP147 Datasheet
In Stock4,029
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 125 W
Configuration: DARLINGTON
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 500
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,029 - -

Popular Products

Category Top Products

TIP142 by Inchange Semiconductor

TIP142

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
TIP35C by Semitronics

TIP35C

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BC546B by Shanghai Lunsure Electronic Technology

BC546B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP42C by Plessey Semiconductors Discrete Components Div

TIP42C

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
IRFZ44N by Inchange Semiconductor

IRFZ44N

Inchange Semiconductor

Other Transistors;
BC807-40 by Taiwan Semiconductor

BC807-40

Taiwan Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC548C by Allegro MicroSystems

BC548C

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846 by Sinyork

BC846

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
TIP120 by National Semiconductor

TIP120

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP127 by Toshiba

TIP127

Toshiba

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP50 by Iskra Semic Capacitors Industry

TIP50

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC547B by Texas Instruments

BC547B

Texas Instruments

BC547B by Texas Instruments is an NPN transistor with a max power dissipation of 0.625W and a min DC current gain of 200. It can handle a max collector current of 0.1A and has a nominal transition frequency of 150MHz. This transistor is commonly used in various electronic applications.
MMBTA92 by Philips Semiconductors

MMBTA92

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
TIP112 by Philips Semiconductors

TIP112

Philips Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP122 by Harris Semiconductor

TIP122

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N3055- by General Electric Solid State

2N3055-

General Electric Solid State

2N3055- by General Electric Solid State is an NPN transistor with a max power dissipation of 115W and max collector current of 15A. With a min hFE of 20, it operates up to 200°C, making it ideal for high-power applications like amplifiers and power supplies.
MMBT3906 by Vishay Intertechnology

MMBT3906

Vishay Intertechnology

Vishay Intertechnology's MMBT3906 is a PNP transistor with a max collector current of 0.2A and min DC current gain of 30. With a max power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for applications requiring high frequency operation such as signal amplification in electronic circuits.
2N3055 by Comset Semiconductors

2N3055

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC847C/AU,215 by NXP Semiconductors

BC847C/AU,215

NXP Semiconductors

BC847C/AU,215 by NXP Semiconductors is an NPN transistor with a single configuration. It has a max power dissipation of 0.25W and a min DC current gain of 420. Ideal for applications requiring a max collector current of 0.1A, such as in high-frequency circuits up to 100MHz operating at temperatures up to 150°C.
BC817-16 by Sprague Electric

BC817-16

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;