Dell Technologies - SNP888JGC/8G

SNP888JGC/8G by Dell Technologies

Image shown is a representation only.

Manufacturer	Dell Technologies
Manufacturer's Part Number	SNP888JGC/8G
Description	Dell; Product Type: RAM Module; Memory Size: 8 GB; Memory Technology: DDR4 SDRAM; Device Supported: Workstation, Server; Limited Warranty: Lifetime;

SNP888JGC/8G Technical Details

NAME	DESCRIPTION
Product Name:	8 GB Certified Memory Module - 1Rx8 DDR4 RDIMM 2400MHz
Device Supported:	Workstation, Server
Limited Warranty:	Lifetime
Error Checking:	ECC
Signal Processing:	Registered
Memory Voltage:	1.2 V
Brand Name:	Dell
Form Factor:	DIMM
Memory Technology:	DDR4 SDRAM
Marketing Information:	Supercharge your Dell™ system with a Dell Memory upgrade engineered, tested and customized for your system. Adding more memory revs your system's engine and allows you to release its full potential when working with 3D imaging, multimedia, and other memory intensive applications.
CAS Latency:	CL17
Memory Size:	8 GB
Product Type:	RAM Module
Number of Pins:	288-pin
Memory Speed:	2400 MHz
Compatibility:	Dell PowerEdge Rack Servers: C4130 FC430 FC630 FC830 M630 M830 R430 R530 R630 R630XL R730 R730XD R930 T430 T630 Dell Precision Workstations: R7910 T5810 T7810 T791
Memory Standard:	DDR4-2400/PC4-19200

Popular Products

LM358MX

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

BSS123LT1G

Onsemi

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

BAV99-7-F

Diodes Incorporated

Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.

MBR0520LT3G

Onsemi

MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.

SS14

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDV303N

Onsemi

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

BAV99

Kec

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148WT

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

261

Mercury Systems

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

2N7002

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;