Diodes Incorporated - 2DA1774QQ-7

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2DA1774QQ-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number 2DA1774QQ-7
Description Small Signal Bipolar Transistors;
Datasheet 2DA1774QQ-7 Datasheet
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2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547CTA by Fairchild Semiconductor

BC547CTA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846B,215 by Nexperia

BC846B,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
MMBT2222A by Minilogic Device

MMBT2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .325 W; Maximum Collector Current (IC): .001 A;
2N2907A by Crystalonics

2N2907A

Crystalonics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
MMBT2222ALT1 by Leshan Radio

MMBT2222ALT1

Leshan Radio

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBT3904WT1G by Onsemi

MMBT3904WT1G

Onsemi

MMBT3904WT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for amplifier applications, it has a small outline package and operates b/w -55°C to 150°C. With a DC current gain of at least 30, this transistor offers fast switching times for efficient performance.
MMBT3904 by Bytesonic Electronics

MMBT3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by Yangzhou Yangjie Electronics

MMBT3906

Yangzhou Yangjie Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
MMBT2222ALT1 by Rectron

MMBT2222ALT1

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Turn On Time (ton): 35 ns; Package Body Material: PLASTIC/EPOXY;
BC817-40 by Micro Commercial Components

BC817-40

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;
2N3904 by Central Semiconductor

2N3904

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
SMMBT4401LT1G by Onsemi

SMMBT4401LT1G

Onsemi

SMMBT4401LT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150°C, it meets AEC-Q101 standards for automotive use.
2N2219A by Motorola

2N2219A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel;
2N2222AUA by Aeroflex/metelics

2N2222AUA

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Terminal Form: NO LEAD;
2N2219A by Crimson Semiconductor

2N2219A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2907AUB by Semicoa

2N2907AUB

Semicoa

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
BC847C by Unisonic Technologies

BC847C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
SMMBTA06LT1G by Onsemi

SMMBTA06LT1G

Onsemi

SMMBTA06LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle a max collector current of 0.5A. With a min DC current gain of 100, it operates at temperatures up to 150°C.