Diodes Incorporated - 2DB1132R-13R

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2DB1132R-13R by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number 2DB1132R-13R
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): 1 A; No. of Terminals: 3;
Datasheet 2DB1132R-13R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 190 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 180
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 32 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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