Diodes Incorporated - 2DB1184Q-13

2DB1184Q-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number 2DB1184Q-13
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
Datasheet 2DB1184Q-13 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 110 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 15 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 120
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Peak Reflow Temperature (C): 260
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