Diodes Incorporated - 2DB1386Q-13R

2DB1386Q-13R by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number 2DB1386Q-13R
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 5 A;
Datasheet 2DB1386Q-13R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 120
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 20 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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