Diodes Incorporated - 2N6517STOE

  1. Home
  2. Diodes Incorporated - 2N6517STOE
2N6517STOE by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number 2N6517STOE
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 350 V;
Datasheet 2N6517STOE Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 40 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 15
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 350 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2222AUA by Vpt Components

2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;
BC547BTA by Fairchild Semiconductor

BC547BTA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2905A by SPC TECHNOLOGY/ MULTICOMP

2N2905A

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;
2N2222A by Microchip Technology

2N2222A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
MMBT2222A by Promax-johnton

MMBT2222A

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY; Maximum Turn Off Time (toff): 285 ns;
2N2222AUB by Tt Electronics Plc

2N2222AUB

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns; JESD-30 Code: R-CDSO-N3;
MMBT2222A-7-F by Diodes Incorporated

MMBT2222A-7-F

Diodes Incorporated

Diodes Inc. MMBT2222A-7-F is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 40. Ideal for switching applications due to its small outline package style and fast turn-on/off times (35ns/285ns).
BC847B by Changzhou Galaxy Century Microelectronics

BC847B

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
BC847B by General Semiconductor

BC847B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222A by Allegro MicroSystems

2N2222A

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
PMBT2369,215 by NXP Semiconductors

PMBT2369,215

NXP Semiconductors

NXP Semiconductors' PMBT2369,215 is a NPN BJT transistor for switching applications. It has a VCEsat of 0.25V, hFE of 20, and IC of 0.2A. With a max operating temperature of 150°C, it offers fast turn-on/off times (10ns/20ns) and high transition frequency (500MHz).
JANTX2N2222AUB by Optek Technology

JANTX2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547C by NXP Semiconductors

BC547C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Siemens

BC817-25

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC547B by Central Semiconductor

BC547B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: ROUND;
BC817-25 by Weitronic Enterprise

BC817-25

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N3904 by Diodes Incorporated

2N3904

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
2N3906 by Micro Electronics

2N3906

Micro Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Microsemi

2N3904

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Panjit International

2N3904

Panjit International

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;