Diodes Incorporated - 2N7000P

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2N7000P by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number 2N7000P
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 5 pF;
Datasheet 2N7000P Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 5 pF
Maximum Drain Current (ID): .2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .4 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-W3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: WIRE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .2 A
Maximum Drain-Source On Resistance: 5 ohm
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