Diodes Incorporated - 8550B

  1. Home
  2. Diodes Incorporated - 8550B
8550B by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number 8550B
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Minimum DC Current Gain (hFE): 100;
Datasheet 8550B Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
No. of Terminals: 2
Maximum Power Dissipation (Abs): 2 W
Maximum Collector-Emitter Voltage: 25 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: S-XUUC-N2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum VCEsat: .5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BDX53C by Crimson Semiconductor

BDX53C

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 8 A; Package Style (Meter): FLANGE MOUNT;
TIP122 by Nte Electronics

TIP122

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Case Connection: COLLECTOR;
2N2905A by Vpt Components

2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
MJE340 by Central Semiconductor

MJE340

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BD13910 by Fairchild Semiconductor

BD13910

Fairchild Semiconductor

BD13910 by Fairchild Semiconductor is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has hFE of 63 and fT of 250MHz. The package is through-hole with a flange mount style in plastic/epoxy material.
JANTXV2N3055 by Microchip Technology

JANTXV2N3055

Microchip Technology

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.
TIP127 by SPC TECHNOLOGY/ MULTICOMP

TIP127

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
MJD117T4 by Motorola

MJD117T4

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; Transistor Application: SWITCHING;
TIP112 by Semiconductors

TIP112

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;
TIP120 by International Devices

TIP120

International Devices

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
MJD127G by Onsemi

MJD127G

Onsemi

MJD127G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode and resistor. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. Ideal for switching applications in small outline packages, it operates up to 150°C with a transition frequency of 4MHz.
BD140-16 by NXP Semiconductors

BD140-16

NXP Semiconductors

BD140-16 by NXP Semiconductors is a PNP power BJT transistor with max VCEsat of 0.5V, hFE of 100, and IC of 1.5A. Ideal for amplifier applications, it has a max operating temp of 150°C and can handle up to 8W power dissipation in a flange mount package style.
BD13910S by Onsemi

BD13910S

Onsemi

The Onsemi BD13910S is a NPN Power BJT with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.
BCX5616QTA by Diodes Incorporated

BCX5616QTA

Diodes Incorporated

Diodes Inc.'s BCX5616QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics conforming to AEC-Q101 standards.
TIP122 by New Jersey Semiconductor Products

TIP122

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Minimum DC Current Gain (hFE): 1000;
TIP120G by Onsemi

TIP120G

Onsemi

TIP120G by Onsemi is a NPN power BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
TIP47 by STMicroelectronics

TIP47

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
2N3055H by Onsemi

2N3055H

Onsemi

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.
BD139-16 by Central Semiconductor

BD139-16

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
TIP110 by Nte Electronics

TIP110

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE; Transistor Application: SWITCHING;