BCM847BS-7-F by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	BCM847BS-7-F
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet	BCM847BS-7-F Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	.9
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Maximum Collector-Emitter Voltage:	45 V
Additional Features:	HIGH RELIABILITY
Maximum Collector-Base Capacitance:	3 pF
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.4 V

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