Diodes Incorporated - BSS63TC

  1. Home
  2. Diodes Incorporated - BSS63TC
BSS63TC by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number BSS63TC
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
Datasheet BSS63TC Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 85 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3906LT1HTSA1 by Infineon Technologies

MMBT3906LT1HTSA1

Infineon Technologies

Infineon's MMBT3906LT1HTSA1 is a PNP BJT transistor with 30 min hFE, ideal for switching applications. With a max VCE of 40V and IC of 0.2A, it operates up to 150°C. This surface-mount device has a rectangular package style and Gull Wing terminals, meeting AEC-Q101 standards for automotive use.
BC547BT&A by Continental Device India

BC547BT&A

Continental Device India

BC547BT&A by Continental Device India is a NPN BJT with 3 terminals, hFE of 200, and max IC of 0.1A. Ideal for switching applications, it has a max VCE of 45V and operates up to 150°C. The transistor's package is cylindrical with matte tin finish in a through-hole terminal form.
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N2219A by Asi Semiconductor

2N2219A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by General Semiconductor

MMBT3906

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;
2N3906 by Semitronics

2N3906

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by NXP Semiconductors

BC817-25

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
MMBT3906 by Jiangsu Changjiang Electronics Technology

MMBT3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
MMBT3906-7-F by Diodes Incorporated

MMBT3906-7-F

Diodes Incorporated

Diodes Inc. MMBT3906-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and max collector-emitter voltage of 40V. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a transition frequency of 250MHz.
JANTX2N2222AUB by Cobham Plc

JANTX2N2222AUB

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 50 V; No. of Elements: 1;
BC817-40,235 by Nexperia

BC817-40,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
BC817-40 by Rectron

BC817-40

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;
BC846B,215 by NXP Semiconductors

BC846B,215

NXP Semiconductors

NXP Semiconductors' BC846B,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 200, it can handle IC up to 0.1A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.
2N2219A by Tt Electronics Plc

2N2219A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM;
2N2222A by Space Power Electronics

2N2222A

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ULN2003AIPWR by Texas Instruments

ULN2003AIPWR

Texas Instruments

ULN2003AIPWR by Texas Instruments is a NPN BJT with 7 elements, max. collector current of 0.5A, and max. collector-emitter voltage of 50V. It's used for switching applications in surface mount setups due to its complex configuration and small outline package style.
JANTX2N2222A by Optek Technology

JANTX2N2222A

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547C by Micro Commercial Components

BC547C

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;
2N3906 by Space Power Electronics

2N3906

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847CDW1T1G by Onsemi

BC847CDW1T1G

Onsemi

BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.